Abstract: Medium voltage silicon carbide (SiC) power semiconductor modules with excellent electrothermal properties offer novel opportunities for revolutionizing high-power electronic converters and ...
Abstract: The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties ...
The new 1200 V SiC MOSFET power modules in SOT-227 packages target high-efficiency automotive, energy, and industrial systems. Vishay Intertechnology has introduced five new 1200 V silicon carbide ...
Vishay Intertechnology, Inc. has introduced five new 1200V MOSFET power modules developed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and ...
There are a number of great libraries out there to allow IoT devices to connect to the internet using a variety of network protocols. For cellular-enabled devices, the choice typically falls on ...
Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power. Power efficiency and reliability remain major challenges in medium to high ...
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE:VSH) unveiled five new 1200 V silicon carbide (SiC) MOSFET power modules designed for automotive, energy, industrial, and telecom applications.
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