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Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
(MENAFN- GlobeNewsWire - Nasdaq) San Francisco, CA, Jan. 12, 2026 (GLOBE NEWSWIRE) -- Java World Mag is issuing this follow-up report to provide additional factual and legal context regarding its ...
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