IEEE

First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects

Abstract: In this work, for the first time, the Flip FET (FFET), a novel stacked transistor technology with self-aligned active and interconnects on both sides of wafer, is proposed and experimentally ...
IEEE

Deep Stacked Autoencoder-Based Long-Term Spectrum Prediction Using Real-World Data

Abstract: Spectrum prediction is challenging due to its multi-dimension, complex inherent dependency, and heterogeneity among the spectrum data. In this paper, we first propose a stacked autoencoder ...